Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics 利用亞閾值安伏特性測定由于氧化空穴和界面態(tài)產(chǎn)生的電離輻射感應(yīng)金屬氧化物半導(dǎo)體場效應(yīng)晶體管閾電壓偏移分量的標(biāo)準(zhǔn)試驗(yàn)方法